My Quote Request
5961-01-133-1253
20 Products
D5847-72
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331253
NSN
5961-01-133-1253
D5847-72
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331253
NSN
5961-01-133-1253
MFG
SKYWORKS SOLUTIONS INC.
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 0.062 INCHES NOMINAL
Related Searches:
5082-5827
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331253
NSN
5961-01-133-1253
5082-5827
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331253
NSN
5961-01-133-1253
MFG
HEWLETT PACKARD CO
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 0.062 INCHES NOMINAL
Related Searches:
1906-0210
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331254
NSN
5961-01-133-1254
1906-0210
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331254
NSN
5961-01-133-1254
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
OVERALL LENGTH: 0.062 INCHES NOMINAL
Related Searches:
4899-02-0001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331254
NSN
5961-01-133-1254
4899-02-0001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331254
NSN
5961-01-133-1254
MFG
WAVETEK RF PRODUCTS INC
Description
OVERALL LENGTH: 0.062 INCHES NOMINAL
Related Searches:
5082-2830
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331254
NSN
5961-01-133-1254
5082-2830
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331254
NSN
5961-01-133-1254
MFG
HEWLETT PACKARD CO
Description
OVERALL LENGTH: 0.062 INCHES NOMINAL
Related Searches:
DME6549-90
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331254
NSN
5961-01-133-1254
DME6549-90
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331254
NSN
5961-01-133-1254
MFG
SKYWORKS SOLUTIONS INC.
Description
OVERALL LENGTH: 0.062 INCHES NOMINAL
Related Searches:
QSCH-5802
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331254
NSN
5961-01-133-1254
QSCH-5802
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331254
NSN
5961-01-133-1254
MFG
HEWLETT-PACKARD CO COMMUNICATIONS COMPONENTS/AVANTEK DIV
Description
OVERALL LENGTH: 0.062 INCHES NOMINAL
Related Searches:
KBF02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011331255
NSN
5961-01-133-1255
KBF02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011331255
NSN
5961-01-133-1255
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.625 INCHES NOMINAL
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
2891887-2
TRANSISTOR
NSN, MFG P/N
5961011331741
NSN
5961-01-133-1741
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: 2891887-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE BASE OR JUNCTION CONTACT-DOUBLE EMITTER
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.364 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.75 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
BFY82
TRANSISTOR
NSN, MFG P/N
5961011331741
NSN
5961-01-133-1741
MFG
SGS MICROELETTRONICA SPA
Description
DESIGN CONTROL REFERENCE: 2891887-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE BASE OR JUNCTION CONTACT-DOUBLE EMITTER
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.364 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.75 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
119357-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011331867
NSN
5961-01-133-1867
119357-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011331867
NSN
5961-01-133-1867
MFG
THALES ATM INC.
Description
DESIGN CONTROL REFERENCE: 119357-0001
III END ITEM IDENTIFICATION: PART OF ILS
MAJOR COMPONENTS: DIODE 17,PRINTED WIRING BOARD 1
MANUFACTURERS CODE: 65597
MOUNTING CONFIGURATION: PLUGIN MTD
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 8.500 INCHES NOMINAL
OVERALL WIDTH: 4.500 INCHES NOMINAL
Related Searches:
4823-585109
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331869
NSN
5961-01-133-1869
4823-585109
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331869
NSN
5961-01-133-1869
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
MP-301-52
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331869
NSN
5961-01-133-1869
MP-301-52
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011331869
NSN
5961-01-133-1869
MFG
MICRO POWER SYSTEMS INC
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
8P3228
TRANSISTOR
NSN, MFG P/N
5961011333344
NSN
5961-01-133-3344
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
TRANSISTOR
Related Searches:
GS810KD1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011333346
NSN
5961-01-133-3346
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
UZ7706R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011333346
NSN
5961-01-133-3346
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3522 500 20059
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011333368
NSN
5961-01-133-3368
3522 500 20059
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011333368
NSN
5961-01-133-3368
MFG
THALES NEDERLAND
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
SA 8847 E
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011333368
NSN
5961-01-133-3368
SA 8847 E
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011333368
NSN
5961-01-133-3368
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
ASC1562400
TRANSISTOR
NSN, MFG P/N
5961011333488
NSN
5961-01-133-3488
MFG
ASC PTY LTD
Description
CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM BASE CURRENT, DC AND 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6059
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1520-01-088-3669
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/502
OVERALL HEIGHT: 0.328 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/502 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
JAN2N6059
TRANSISTOR
NSN, MFG P/N
5961011333488
NSN
5961-01-133-3488
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM BASE CURRENT, DC AND 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6059
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1520-01-088-3669
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/502
OVERALL HEIGHT: 0.328 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/502 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN