My Quote Request
5961-01-138-2857
20 Products
0N516338
TRANSISTOR
NSN, MFG P/N
5961011382857
NSN
5961-01-138-2857
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
Related Searches:
SJ7012H
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011379318
NSN
5961-01-137-9318
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 100.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.790 INCHES NOMINAL ALL TRANSISTOR
OVERALL LENGTH: 1.550 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 1.550 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
48-137115
TRANSISTOR
NSN, MFG P/N
5961011380538
NSN
5961-01-138-0538
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
TRANSISTOR
Related Searches:
48S134997
TRANSISTOR
NSN, MFG P/N
5961011380538
NSN
5961-01-138-0538
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
ES4608-01
DIODE
NSN, MFG P/N
5961011380988
NSN
5961-01-138-0988
MFG
DRS SUSTAINMENT SYSTEMS INC. DIV DRS SUSTAINMENT SYSTEMS INC. USE CAGE CODE 98255 FOR CATALOGING.
Description
DIODE
Related Searches:
H617
DIODE
NSN, MFG P/N
5961011380991
NSN
5961-01-138-0991
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
DIODE
Related Searches:
1901-0767
DIODE
NSN, MFG P/N
5961011380995
NSN
5961-01-138-0995
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
DIODE
Related Searches:
162596-1
DIODE ASSY
NSN, MFG P/N
5961011381018
NSN
5961-01-138-1018
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
DIODE ASSY
Related Searches:
J6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011381158
NSN
5961-01-138-1158
MFG
DIODES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
29015-001-1
TRANSISTOR
NSN, MFG P/N
5961011381496
NSN
5961-01-138-1496
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
23429
TRANSISTOR
NSN, MFG P/N
5961011381497
NSN
5961-01-138-1497
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 23429
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
SDT7403/STD85503
TRANSISTOR
NSN, MFG P/N
5961011381497
NSN
5961-01-138-1497
MFG
TAIT-TORAN INC FOURIN CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 23429
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
212691
TRANSISTOR
NSN, MFG P/N
5961011381739
NSN
5961-01-138-1739
MFG
FLUKE CORPORATION
Description
TRANSISTOR
Related Searches:
4822 130 44256
TRANSISTOR
NSN, MFG P/N
5961011381739
NSN
5961-01-138-1739
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
TRANSISTOR
Related Searches:
BC557
TRANSISTOR
NSN, MFG P/N
5961011381739
NSN
5961-01-138-1739
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
BD159
TRANSISTOR
NSN, MFG P/N
5961011381741
NSN
5961-01-138-1741
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
JAN1N6042A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011381787
NSN
5961-01-138-1787
JAN1N6042A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011381787
NSN
5961-01-138-1787
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6042A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.7 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
0N516335
TRANSISTOR
NSN, MFG P/N
5961011382854
NSN
5961-01-138-2854
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
Related Searches:
0N516336
TRANSISTOR
NSN, MFG P/N
5961011382855
NSN
5961-01-138-2855
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
Related Searches:
0N516337
TRANSISTOR
NSN, MFG P/N
5961011382856
NSN
5961-01-138-2856
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR