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5961-01-143-0815

20 Products

GZ50312A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011430815

NSN

5961-01-143-0815

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GZ50312A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011430815

NSN

5961-01-143-0815

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 3.2 MILLIMETERS NOMINAL
OVERALL LENGTH: 19.1 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 27.8 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

SD214DE-3

TRANSISTOR

NSN, MFG P/N

5961011427897

NSN

5961-01-142-7897

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SD214DE-3

TRANSISTOR

NSN, MFG P/N

5961011427897

NSN

5961-01-142-7897

MFG

UNIVERSAL SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MICROAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: LOS ANGELES CLASS SSN (688); SPRUANCE CLASS DD (963); EMORY S. LAND CLASS AS; AIRCRAFT, HARRIER AV-8B; GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE; AIRCRAFT, HORNET F/A-18; AIRCRAFT, TOMCAT F-14; INTEGRATED UNDERWATER SURVIELLANCE SYSTEMS; SUPPORT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 INSULATED WIRE LEAD
TEST DATA DOCUMENT: 09344-PC73579 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
~1: EQUIPMENT, B-1 AIRCRAFT; STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT)

1N5231C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011427898

NSN

5961-01-142-7898

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1N5231C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011427898

NSN

5961-01-142-7898

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: SXQ8 82/3 FOO
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6447 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N5847C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011427898

NSN

5961-01-142-7898

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1N5847C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011427898

NSN

5961-01-142-7898

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: SXQ8 82/3 FOO
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6447 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

386-0211-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011427898

NSN

5961-01-142-7898

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386-0211-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011427898

NSN

5961-01-142-7898

MFG

HARRIS CORPORATION DBA HARRIS BROADCAST TRANSMISSION DIVISION DIV BROADCAST COMMUNICATIONS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: SXQ8 82/3 FOO
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6447 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

0094079001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011428079

NSN

5961-01-142-8079

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0094079001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011428079

NSN

5961-01-142-8079

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

Description

ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: BMEWSMIPUPGRA
OVERALL HEIGHT: 0.625 INCHES NOMINAL
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH: 1.290 INCHES MAXIMUM

MDA952-2

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011428079

NSN

5961-01-142-8079

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MDA952-2

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011428079

NSN

5961-01-142-8079

MFG

FREESCALE SEMICONDUCTOR INC.

Description

ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: BMEWSMIPUPGRA
OVERALL HEIGHT: 0.625 INCHES NOMINAL
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH: 1.290 INCHES MAXIMUM

1906-0069

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011428081

NSN

5961-01-142-8081

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1906-0069

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011428081

NSN

5961-01-142-8081

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REVERSE VOLTAGE, PEAK
III END ITEM IDENTIFICATION: SPECTRUM ANALYZER
TERMINAL TYPE AND QUANTITY: 14 PIN

810280-101

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011428081

NSN

5961-01-142-8081

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810280-101

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011428081

NSN

5961-01-142-8081

MFG

EVANS & SUTHERLAND COMPUTER CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REVERSE VOLTAGE, PEAK
III END ITEM IDENTIFICATION: SPECTRUM ANALYZER
TERMINAL TYPE AND QUANTITY: 14 PIN

VM48

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011428081

NSN

5961-01-142-8081

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VM48

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011428081

NSN

5961-01-142-8081

MFG

L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REVERSE VOLTAGE, PEAK
III END ITEM IDENTIFICATION: SPECTRUM ANALYZER
TERMINAL TYPE AND QUANTITY: 14 PIN

6010639-002

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011429309

NSN

5961-01-142-9309

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6010639-002

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011429309

NSN

5961-01-142-9309

MFG

BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 180.00 AMPERES PEAK PULSE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 BREAKDOWN VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.375 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TERMINAL LUG

GZ70916A

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011429309

NSN

5961-01-142-9309

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GZ70916A

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011429309

NSN

5961-01-142-9309

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 180.00 AMPERES PEAK PULSE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 BREAKDOWN VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.375 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TERMINAL LUG

2N6239

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011429757

NSN

5961-01-142-9757

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2N6239

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011429757

NSN

5961-01-142-9757

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM ON-STATE CURRENT, DC
III END ITEM IDENTIFICATION: FLOTROL RECT1 74006
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-126
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.120 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL LENGTH: 0.595 INCHES MINIMUM AND 0.655 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL AND 1.0 MAXIMUM GATE TRIGGER VOLTAGE, DC

148-0131-001

TRANSISTOR

NSN, MFG P/N

5961011430139

NSN

5961-01-143-0139

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148-0131-001

TRANSISTOR

NSN, MFG P/N

5961011430139

NSN

5961-01-143-0139

MFG

SHUGART CORP DBA INTL ASSEMBLY SPECIALISTS

MAC10-1

TRANSISTOR

NSN, MFG P/N

5961011430139

NSN

5961-01-143-0139

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MAC10-1

TRANSISTOR

NSN, MFG P/N

5961011430139

NSN

5961-01-143-0139

MFG

STATE HEALTH SERVICES TEXAS DEPARTMENT OF USE CAGE CODE 01WR9 FOR CATALOGING.

720602-43

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011430177

NSN

5961-01-143-0177

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720602-43

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011430177

NSN

5961-01-143-0177

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

MV6359

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011430177

NSN

5961-01-143-0177

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MV6359

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011430177

NSN

5961-01-143-0177

MFG

MICROSEMI CORPORATION

Description

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

405752

TRANSISTOR

NSN, MFG P/N

5961011430306

NSN

5961-01-143-0306

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405752

TRANSISTOR

NSN, MFG P/N

5961011430306

NSN

5961-01-143-0306

MFG

TARGET CORPORATION DBA TARGET

Description

CURRENT RATING PER CHARACTERISTIC: 0.250 AMPERES NOMINAL COLLECTOR CURRENT, DC
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DISTANCE MEASURING EQUIPMENT (DME)
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.160 INCHES
OVERALL DIAMETER: 0.204 INCHES NOMINAL
OVERALL LENGTH: 0.136 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

E1B5TRB160

TRANSISTOR

NSN, MFG P/N

5961011430306

NSN

5961-01-143-0306

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E1B5TRB160

TRANSISTOR

NSN, MFG P/N

5961011430306

NSN

5961-01-143-0306

MFG

VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV

Description

CURRENT RATING PER CHARACTERISTIC: 0.250 AMPERES NOMINAL COLLECTOR CURRENT, DC
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DISTANCE MEASURING EQUIPMENT (DME)
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.160 INCHES
OVERALL DIAMETER: 0.204 INCHES NOMINAL
OVERALL LENGTH: 0.136 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

1611AS793

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011430815

NSN

5961-01-143-0815

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1611AS793

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011430815

NSN

5961-01-143-0815

MFG

NAVAL AIR SYSTEMS COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 3.2 MILLIMETERS NOMINAL
OVERALL LENGTH: 19.1 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 27.8 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS