My Quote Request
5961-01-365-6249
20 Products
048922-0002
TRANSISTOR
NSN, MFG P/N
5961013656249
NSN
5961-01-365-6249
MFG
THALES ATM INC.
Description
DESIGN CONTROL REFERENCE: 048922-0002
III END ITEM IDENTIFICATION: BEACON INTERROGATOR MODE S
MANUFACTURERS CODE: 65597
THE MANUFACTURERS DATA:
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2112-21031-00-0
TRANSISTOR
NSN, MFG P/N
5961013655562
NSN
5961-01-365-5562
MFG
TADIRAN LTD
Description
TRANSISTOR
Related Searches:
23A005
TRANSISTOR
NSN, MFG P/N
5961013655562
NSN
5961-01-365-5562
MFG
MICROSEMI CORP.-RF POWER PRODUCTS DIV MICROSEMI CORPORATION
Description
TRANSISTOR
Related Searches:
TRW 54601
TRANSISTOR
NSN, MFG P/N
5961013655562
NSN
5961-01-365-5562
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
2112-21032-00-0
TRANSISTOR
NSN, MFG P/N
5961013655563
NSN
5961-01-365-5563
MFG
TADIRAN LTD
Description
TRANSISTOR
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ST-83305
TRANSISTOR
NSN, MFG P/N
5961013655563
NSN
5961-01-365-5563
MFG
SGS-THOMSON MICROELECTRONICS INC
Description
TRANSISTOR
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911AS8251
TRANSISTOR
NSN, MFG P/N
5961013655564
NSN
5961-01-365-5564
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.365 INCHES NOMINAL
OVERALL LENGTH: 0.455 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED
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06-234104-001
TRANSISTOR
NSN, MFG P/N
5961013655565
NSN
5961-01-365-5565
MFG
KIDDE TECHNOLOGIES INC DBA FENWAL SAFETY SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 1
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.030 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28527-3131439 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL GATE TO SOURCE VOLTAGE
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3131439G001
TRANSISTOR
NSN, MFG P/N
5961013655565
NSN
5961-01-365-5565
MFG
ITT CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 1
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.030 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28527-3131439 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL GATE TO SOURCE VOLTAGE
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DM1196
TRANSISTOR
NSN, MFG P/N
5961013655565
NSN
5961-01-365-5565
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 1
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.030 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28527-3131439 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL GATE TO SOURCE VOLTAGE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655566
NSN
5961-01-365-5566
90001A1947
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655566
NSN
5961-01-365-5566
MFG
MARINE CORPS LOGISTICS COMMAND TECHNICAL DATA REPOSITORY CUSTOMER SERVICE-MICC LOGISTICS OPERATIONS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.196 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.110 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, PEAK
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BYV28-200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655566
NSN
5961-01-365-5566
MFG
PHILIPS COMPONENTS DISCRETE PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.196 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.110 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, PEAK
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655567
NSN
5961-01-365-5567
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: SPECIAL PURPOSE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.099 INCHES
OVERALL DIAMETER: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.198 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 THREADED STUD
THREAD QUANTITY PER INCH: 48
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.1 MAXIMUM FORWARD VOLTAGE, DC AND 75.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
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JANTX1N6309
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655568
NSN
5961-01-365-5568
JANTX1N6309
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655568
NSN
5961-01-365-5568
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CAPACITANCE RATING IN PICOFARADS: 2000.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 150.00 MICROAMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6309
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/533 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 NOMINAL REGULATOR VOLTAGE, DC AND 1.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
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JANTX1N6642
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655569
NSN
5961-01-365-5569
JANTX1N6642
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655569
NSN
5961-01-365-5569
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CAPACITANCE RATING IN PICOFARADS: 5.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6642
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/578
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/578 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, INSTANTANEOUS
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655997
NSN
5961-01-365-5997
7555306P0601
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655997
NSN
5961-01-365-5997
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
FEATURES PROVIDED: GOLD PLATED LEADS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 40.0 MILLIMETERS MINIMUM AND 60.0 MILLIMETERS MAXIMUM
OVERALL LENGTH: 670.0 MILLIMETERS MINIMUM AND 710.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 175.0 MILLIMETERS MINIMUM AND 225.0 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 200.0 MILLIMETERS MINIMUM AND 225.0 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM BREAKDOWN VOLTAGE, DC
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655997
NSN
5961-01-365-5997
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
FEATURES PROVIDED: GOLD PLATED LEADS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 40.0 MILLIMETERS MINIMUM AND 60.0 MILLIMETERS MAXIMUM
OVERALL LENGTH: 670.0 MILLIMETERS MINIMUM AND 710.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 175.0 MILLIMETERS MINIMUM AND 225.0 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 200.0 MILLIMETERS MINIMUM AND 225.0 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM BREAKDOWN VOLTAGE, DC
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2112-21116-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013656049
NSN
5961-01-365-6049
2112-21116-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013656049
NSN
5961-01-365-6049
MFG
TADIRAN LTD
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.525 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013656049
NSN
5961-01-365-6049
USE2505HR
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013656049
NSN
5961-01-365-6049
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.525 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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SKKH91/08D
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013656050
NSN
5961-01-365-6050
SKKH91/08D
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013656050
NSN
5961-01-365-6050
MFG
P/M INDUSTRIES INC .
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 95.00 AMPERES ON-STATE CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 900.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 30.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 93.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 20.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB W/SCREW AND 1 TAB, SOLDER LUG