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5961-01-406-6636
20 Products
1N6120A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014066636
NSN
5961-01-406-6636
MFG
BKC SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 8.90 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.149 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.029 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.1 MINIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
427980-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014062448
NSN
5961-01-406-2448
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
INCLOSURE MATERIAL: CERAMIC
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
BR427-20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014062804
NSN
5961-01-406-2804
MFG
EDAL INDUSTRIES INC.
Description
INCLOSURE MATERIAL: PLASTIC
SPECIAL FEATURES: COMMERCIAL RELIABILITY
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
3865005
TRANSISTOR
NSN, MFG P/N
5961014064544
NSN
5961-01-406-4544
MFG
DELTYME CORPORATION
Description
DESIGN CONTROL REFERENCE: 3865005
III END ITEM IDENTIFICATION: UNINTERUPTED POWER SUPPLY
MANUFACTURERS CODE: 52297
THE MANUFACTURERS DATA:
Related Searches:
1187-0080
TRANSISTOR
NSN, MFG P/N
5961014065226
NSN
5961-01-406-5226
MFG
PACE INC ORPORATED
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG FAHRENHEIT AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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VP0104N3
TRANSISTOR
NSN, MFG P/N
5961014065226
NSN
5961-01-406-5226
MFG
SUPERTEX INC.
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG FAHRENHEIT AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
6097275
TRANSISTOR
NSN, MFG P/N
5961014065423
NSN
5961-01-406-5423
MFG
NAVAL SEA SYSTEMS COMMAND
Description
III END ITEM IDENTIFICATION: AN/SLQ-48, VE E/I FSCM 53711
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THIS ITEM IS SELECTED FOR: FALL = 0.25 US MAX.
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
68353
TRANSISTOR
NSN, MFG P/N
5961014065423
NSN
5961-01-406-5423
MFG
HARRIS CORP SEMICONDUCTOR SECTOR
Description
III END ITEM IDENTIFICATION: AN/SLQ-48, VE E/I FSCM 53711
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THIS ITEM IS SELECTED FOR: FALL = 0.25 US MAX.
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
JANTX2N5671
TRANSISTOR
NSN, MFG P/N
5961014065423
NSN
5961-01-406-5423
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
III END ITEM IDENTIFICATION: AN/SLQ-48, VE E/I FSCM 53711
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THIS ITEM IS SELECTED FOR: FALL = 0.25 US MAX.
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
4910A0050-35
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014065428
NSN
5961-01-406-5428
4910A0050-35
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014065428
NSN
5961-01-406-5428
MFG
L-3 COMMUNICATIONS WESTWOOD CORPORATION DBA EDI DIVISION DIV TANO DIVISION
Description
DESIGN CONTROL REFERENCE: 4910A0050-35
III END ITEM IDENTIFICATION: REMOTE TERMINAL UNIT, WLB-RTU 4
MAJOR COMPONENTS: ZENER DIODE 3
MANUFACTURERS CODE: 23905
SPECIAL FEATURES: 9.1 V ZENER VOLTAGE WITH 2 PERCENT TOLERANCE; 5 WATTS DC POWER DISSIPATION
THE MANUFACTURERS DATA:
Related Searches:
MSC82001
TRANSISTOR
NSN, MFG P/N
5961014065715
NSN
5961-01-406-5715
MFG
STMICROELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.149 INCHES MINIMUM
OVERALL WIDTH: 0.790 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 NOMINAL COLLECTOR SUPPLY VOLTAGE
Related Searches:
JANTXV1N4627UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014065928
NSN
5961-01-406-5928
JANTXV1N4627UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014065928
NSN
5961-01-406-5928
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4627UR-1
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
Related Searches:
JANTX2N2907AUA
TRANSISTOR
NSN, MFG P/N
5961014065929
NSN
5961-01-406-5929
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N2907AUA
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/291
OVERALL HEIGHT: 0.061 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.215 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
OVERALL WIDTH: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.16 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/291 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
945244
TRANSISTOR
NSN, MFG P/N
5961014066019
NSN
5961-01-406-6019
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
TRANSISTOR
Related Searches:
H980039-003B
TRANSISTOR
NSN, MFG P/N
5961014066019
NSN
5961-01-406-6019
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
PP9076
TRANSISTOR
NSN, MFG P/N
5961014066019
NSN
5961-01-406-6019
MFG
MICRO USPD INC
Description
TRANSISTOR
Related Searches:
SD11207
TRANSISTOR
NSN, MFG P/N
5961014066019
NSN
5961-01-406-6019
MFG
SOLITRON DEVICES INC.
Description
TRANSISTOR
Related Searches:
151-1252-00
TRANSISTOR
NSN, MFG P/N
5961014066029
NSN
5961-01-406-6029
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
1855-0800
TRANSISTOR
NSN, MFG P/N
5961014066033
NSN
5961-01-406-6033
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
TRANSISTOR
Related Searches:
MTD3055EL
TRANSISTOR
NSN, MFG P/N
5961014066033
NSN
5961-01-406-6033
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR