My Quote Request
5961-01-413-6274
20 Products
MMBT2222AL
TRANSISTOR
NSN, MFG P/N
5961014136274
NSN
5961-01-413-6274
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 6.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: WASP CLASS LHD, NIMITZ CLASS CVN, FORRESTAL CLASS CV, ARLEIGH BURKE CLASS DDG, TACTICAL AIR CONTROL SYSTEMS 407L, TARAWA CLASS LHA, TICONDEROGA CLASS CG (47), AIRCRAFT, SOF ( AC-130H, MC-130H, EC-130E, HC-130), SUPPLY CLASS AOE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN. WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MMBTA56LT1
TRANSISTOR
NSN, MFG P/N
5961014136275
NSN
5961-01-413-6275
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
TRANSFER RATIO: 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MMBTA06
TRANSISTOR
NSN, MFG P/N
5961014136276
NSN
5961-01-413-6276
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MMBTA06LT1
TRANSISTOR
NSN, MFG P/N
5961014136276
NSN
5961-01-413-6276
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
VA-75-0583-001
TRANSISTOR
NSN, MFG P/N
5961014136276
NSN
5961-01-413-6276
MFG
SELEX GALILEO LTD
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MA4PH151
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014136282
NSN
5961-01-413-6282
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
TMPD4448
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014136285
NSN
5961-01-413-6285
MFG
ALLEGRO MICROSYSTEMS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SCX58
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014136797
NSN
5961-01-413-6797
MFG
COLE-PARMER INSTRUMENT COMPANY DBA BARNANT DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G200785-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014136893
NSN
5961-01-413-6893
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: 01-262-3005 E/I FSCM 52088
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, DC AND 1.25 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
SS6972
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014136893
NSN
5961-01-413-6893
MFG
SEMTECH CORPORATION
Description
III END ITEM IDENTIFICATION: 01-262-3005 E/I FSCM 52088
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, DC AND 1.25 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
UES1105
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014136893
NSN
5961-01-413-6893
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: 01-262-3005 E/I FSCM 52088
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, DC AND 1.25 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
G200225-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014136896
NSN
5961-01-413-6896
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5523D-1
III END ITEM IDENTIFICATION: 01-262-3005 E/I FSCM 52088
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTX1N5523D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014136896
NSN
5961-01-413-6896
JANTX1N5523D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014136896
NSN
5961-01-413-6896
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5523D-1
III END ITEM IDENTIFICATION: 01-262-3005 E/I FSCM 52088
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
G162421-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014136999
NSN
5961-01-413-6999
G162421-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014136999
NSN
5961-01-413-6999
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 60.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: 01-262-3005 E/I FSCM 52088
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
SL1560FR
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014136999
NSN
5961-01-413-6999
SL1560FR
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014136999
NSN
5961-01-413-6999
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 60.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: 01-262-3005 E/I FSCM 52088
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
2N3854A
TRANSISTOR
NSN, MFG P/N
5961014137126
NSN
5961-01-413-7126
MFG
GENERAL ELECTRIC CO INSTRUMENTATION AND COMMUNICATION EQUIPMENT SERVICE
Description
TRANSISTOR
Related Searches:
4901-03-8541
TRANSISTOR
NSN, MFG P/N
5961014137126
NSN
5961-01-413-7126
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
TRANSISTOR
Related Searches:
3607505
TRANSISTOR
NSN, MFG P/N
5961014138591
NSN
5961-01-413-8591
MFG
SWEO CONTROLS INC DBA BALDOR SWEO DRIVE
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
Related Searches:
25-0940-1200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014139442
NSN
5961-01-413-9442
25-0940-1200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014139442
NSN
5961-01-413-9442
MFG
PHASETRONICS INC DBA MOTORTRONICS
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
89108812-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014140591
NSN
5961-01-414-0591
89108812-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014140591
NSN
5961-01-414-0591
MFG
OGDEN AIR LOGISTICS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: LGM030G
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: 00-1LC MME-7401A
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0