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5961-01-560-9482
20 Products
STP16NE06
TRANSISTOR
NSN, MFG P/N
5961015609482
NSN
5961-01-560-9482
MFG
STMICROELECTRONICS INC
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: POWER MOSFET
SPECIAL FEATURES: N-CHANNEL 60V - 0.08OMH-16AMP-TO220
Related Searches:
PT-7511
TRANSISTOR
NSN, MFG P/N
5961015603126
NSN
5961-01-560-3126
MFG
POWER TECH INC
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.313 INCHES
OVERALL LENGTH: 1.480 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.870 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 90AMP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
Related Searches:
5D0013-3B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015604235
NSN
5961-01-560-4235
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - GLOBAL MOBILITY SYSTEMS
Description
III END ITEM IDENTIFICATION: AIRCRAFT, HERCULES C-130
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE, DIODE-ASSEMBLY, ENCAPSULATED
INCLOSURE MATERIAL: PLASTIC
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 25.250 INCHES NOMINAL
SPECIAL FEATURES: WIRE: NO 16 AWG PER MIL-W-22759/14-16-9, DIODE: JANTX1N4469, VOLTAGE REGULATOR 1.5 W. 15A PER MIL-S-19500/406
TEST DATA DOCUMENT: 88277-5D0013 STANDARD
Related Searches:
R-730
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015604235
NSN
5961-01-560-4235
MFG
RUSSTECH ENGINEERING CO INC
Description
III END ITEM IDENTIFICATION: AIRCRAFT, HERCULES C-130
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE, DIODE-ASSEMBLY, ENCAPSULATED
INCLOSURE MATERIAL: PLASTIC
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 25.250 INCHES NOMINAL
SPECIAL FEATURES: WIRE: NO 16 AWG PER MIL-W-22759/14-16-9, DIODE: JANTX1N4469, VOLTAGE REGULATOR 1.5 W. 15A PER MIL-S-19500/406
TEST DATA DOCUMENT: 88277-5D0013 STANDARD
Related Searches:
RB5D0013-3B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015604235
NSN
5961-01-560-4235
RB5D0013-3B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015604235
NSN
5961-01-560-4235
MFG
R & B ELECTRONICS INC.
Description
III END ITEM IDENTIFICATION: AIRCRAFT, HERCULES C-130
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE, DIODE-ASSEMBLY, ENCAPSULATED
INCLOSURE MATERIAL: PLASTIC
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 25.250 INCHES NOMINAL
SPECIAL FEATURES: WIRE: NO 16 AWG PER MIL-W-22759/14-16-9, DIODE: JANTX1N4469, VOLTAGE REGULATOR 1.5 W. 15A PER MIL-S-19500/406
TEST DATA DOCUMENT: 88277-5D0013 STANDARD
Related Searches:
SI1037X
TRANSISTOR
NSN, MFG P/N
5961015606102
NSN
5961-01-560-6102
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
III END ITEM IDENTIFICATION: F-18 FIGHTER AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: P-CHANNEL 1.8 - V G-S MOSFET
Related Searches:
SMLJ36A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015606475
NSN
5961-01-560-6475
MFG
MDE SEMICONDUCTOR INC
Description
POWER RATING PER CHARACTERISTIC: 3000.0 WATTS MINIMUM PEAK PULSE OUTPUT POWER
SPECIAL FEATURES: LOW PROFILE PACKAGE, LOW INDUCTANCE, HIGH TEMP SOLDERING
Related Searches:
5D0013-1B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015606700
NSN
5961-01-560-6700
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - GLOBAL MOBILITY SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
R-710
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015606700
NSN
5961-01-560-6700
MFG
RUSSTECH ENGINEERING CO INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
RB5D0013-1B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015606700
NSN
5961-01-560-6700
RB5D0013-1B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015606700
NSN
5961-01-560-6700
MFG
R & B ELECTRONICS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
AR94101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015606713
NSN
5961-01-560-6713
MFG
JOHN DEERE CONSTRUCTION & FORESTRY COMPANY
Description
III END ITEM IDENTIFICATION: EXCAVATOR,MULITPURPOSE,CRAWLER MOUNT NSN 3805-01-463-0804
Related Searches:
5D0013-3A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015606726
NSN
5961-01-560-6726
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - GLOBAL MOBILITY SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
R-530
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015606726
NSN
5961-01-560-6726
MFG
RUSSTECH ENGINEERING CO INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
RB5D0013-3A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015606726
NSN
5961-01-560-6726
RB5D0013-3A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015606726
NSN
5961-01-560-6726
MFG
R & B ELECTRONICS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5D0013-5A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015606728
NSN
5961-01-560-6728
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - GLOBAL MOBILITY SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
R-550
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015606728
NSN
5961-01-560-6728
MFG
RUSSTECH ENGINEERING CO INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTXV1N4626
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015608153
NSN
5961-01-560-8153
JANTXV1N4626
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015608153
NSN
5961-01-560-8153
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.40 AMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4626-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL LENGTH: 2.120 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
PH2000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015608623
NSN
5961-01-560-8623
MFG
AMPLIFIER RESEARCH CORP. DBA A R DIV AR RF/MICROWAVE INSTRUMENTATION
Description
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: PM 2002 POWER METER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DUAL DIODE POWER HEAD
SPECIAL FEATURES: 3 PRIMARY FUCTIONS ARE 1) CONVERTS RF OR MICROWAVE POWER TO EQUIVALENT VOLTAGE THAT CAN BE PROCESSED BY PWR METER; 2) PRESENT TO THE INCIDENT POWER AND IMPEDANCE; 3) INTRODUCE SMALLEST DRIFT AND NOISE POSSIBLE; 10 KHZ TO 8 GHZ FREQUENCY RANGE; -60 TO +20
~1: DBM DYNAMIC FREQUENCY RANGE; 50 OHM IMPEDANCE; 150 PW DRIFT; 65 PW NOISE
Related Searches:
2015680-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015609174
NSN
5961-01-560-9174
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
III END ITEM IDENTIFICATION: MODULAR ASSY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY)DIODE, REGULATOR
Related Searches:
2017754-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015609179
NSN
5961-01-560-9179
2017754-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015609179
NSN
5961-01-560-9179
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
III END ITEM IDENTIFICATION: POWER SUPPLY
SPECIAL FEATURES: (INAVY)SEMICOND, RECTIFIER