My Quote Request
5961-01-232-8109
20 Products
MIL-S-19500/204
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012328109
NSN
5961-01-232-8109
MIL-S-19500/204
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012328109
NSN
5961-01-232-8109
MFG
NAVAL INVENTORY CONTROL POINT MECHANICSBURG
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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40HFL100S05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012324770
NSN
5961-01-232-4770
40HFL100S05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012324770
NSN
5961-01-232-4770
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5820-01-148-3977 RADIO TERMINAL
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-203AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.690 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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91617160
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012324770
NSN
5961-01-232-4770
MFG
THALES AIR SYSTEMS SA
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5820-01-148-3977 RADIO TERMINAL
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-203AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.690 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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A139P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012324770
NSN
5961-01-232-4770
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5820-01-148-3977 RADIO TERMINAL
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-203AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.690 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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A3049331
TRANSISTOR
NSN, MFG P/N
5961012324960
NSN
5961-01-232-4960
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
TRANSISTOR
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MIS-19836/34
TRANSISTOR
NSN, MFG P/N
5961012324961
NSN
5961-01-232-4961
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: MIS-19836/34
III END ITEM IDENTIFICATION: 1430-01-087-6338
MANUFACTURERS CODE: 18876
TEST DATA DOCUMENT: 18876-MIS-19836/34 DRAWING
THE MANUFACTURERS DATA:
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012325440
NSN
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MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
INCLOSURE MATERIAL: CERAMIC AND METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.255 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.440 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 145.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
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352-0735-031
TRANSISTOR
NSN, MFG P/N
5961012327030
NSN
5961-01-232-7030
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-352-0735 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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TRANSISTOR
NSN, MFG P/N
5961012327030
NSN
5961-01-232-7030
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-352-0735 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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SDT5003
TRANSISTOR
NSN, MFG P/N
5961012327030
NSN
5961-01-232-7030
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-352-0735 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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MSC1350M
TRANSISTOR
NSN, MFG P/N
5961012327031
NSN
5961-01-232-7031
MFG
MICROWAVE SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.900 INCHES NOMINAL
OVERALL WIDTH: 0.405 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.101 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL COLLECTOR SUPPLY VOLTAGE AND 65.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012327068
NSN
5961-01-232-7068
PBT10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012327068
NSN
5961-01-232-7068
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
SPECIAL FEATURES: THREE PHASE FULL-WAVE BRIDGE RECTIFIER;100.0 V;27.5 AMPS;LG 2.000 IN. MAX;W 1.500 IN. MAX;H 0.406 IN.;HEAT SINK MTG;STORAGE TEMP RANGE M55 DEG C TO P175 DEG C
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TRANSISTOR
NSN, MFG P/N
5961012327597
NSN
5961-01-232-7597
MFG
TOPAZ SEMICONDUCTOR INC SUB OF HYTEK MICROSYSTEMS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-804238 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, INSTANTANEOUS
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804238-1
TRANSISTOR
NSN, MFG P/N
5961012327597
NSN
5961-01-232-7597
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-804238 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, INSTANTANEOUS
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TRANSISTOR
NSN, MFG P/N
5961012327597
NSN
5961-01-232-7597
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-804238 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, INSTANTANEOUS
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M1049
TRANSISTOR
NSN, MFG P/N
5961012327597
NSN
5961-01-232-7597
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-804238 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, INSTANTANEOUS
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VA-85-0567-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012327675
NSN
5961-01-232-7675
VA-85-0567-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012327675
NSN
5961-01-232-7675
MFG
SELEX GALILEO LTD
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES NOMINAL DRAIN CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.308 INCHES MAXIMUM
OVERALL LENGTH: 0.808 INCHES MAXIMUM
OVERALL WIDTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR
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VQ1006J
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012327675
NSN
5961-01-232-7675
VQ1006J
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012327675
NSN
5961-01-232-7675
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES NOMINAL DRAIN CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.308 INCHES MAXIMUM
OVERALL LENGTH: 0.808 INCHES MAXIMUM
OVERALL WIDTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR
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127000PC89
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012328109
NSN
5961-01-232-8109
127000PC89
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012328109
NSN
5961-01-232-8109
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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JAN2N1800
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012328109
NSN
5961-01-232-8109
JAN2N1800
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012328109
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5961-01-232-8109
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
SEMICONDUCTOR DEVICE,THYRISTOR