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5961-01-238-7600

20 Products

MB5744

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012387600

NSN

5961-01-238-7600

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MB5744

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012387600

NSN

5961-01-238-7600

MFG

MICROSEMI CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MANUFACTURERS CODE: 64547
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 805891-1
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.570 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 TURRET

S10-28

TRANSISTOR

NSN, MFG P/N

5961012386451

NSN

5961-01-238-6451

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S10-28

TRANSISTOR

NSN, MFG P/N

5961012386451

NSN

5961-01-238-6451

MFG

ACRIAN INC

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES NOMINAL
OVERALL LENGTH: 0.975 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 60.0 WATTS NOMINAL TOTAL POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 NOMINAL COLLECTOR SUPPLY VOLTAGE

3T0045-001

TRANSISTOR

NSN, MFG P/N

5961012386452

NSN

5961-01-238-6452

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3T0045-001

TRANSISTOR

NSN, MFG P/N

5961012386452

NSN

5961-01-238-6452

MFG

NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV

Description

CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: MESSAGE PRO AUX STOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 22915
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 3T0045-001
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

NH3T0045

TRANSISTOR

NSN, MFG P/N

5961012386452

NSN

5961-01-238-6452

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NH3T0045

TRANSISTOR

NSN, MFG P/N

5961012386452

NSN

5961-01-238-6452

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: MESSAGE PRO AUX STOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 22915
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 3T0045-001
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

ST4845H

TRANSISTOR

NSN, MFG P/N

5961012386452

NSN

5961-01-238-6452

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ST4845H

TRANSISTOR

NSN, MFG P/N

5961012386452

NSN

5961-01-238-6452

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: MESSAGE PRO AUX STOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 22915
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 3T0045-001
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

Z0-28F

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012386454

NSN

5961-01-238-6454

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Z0-28F

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012386454

NSN

5961-01-238-6454

MFG

ACRIAN INC

Description

MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 4 RIBBON

ZO-28F

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012386454

NSN

5961-01-238-6454

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ZO-28F

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012386454

NSN

5961-01-238-6454

MFG

RF PRODUCTS INC

Description

MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 4 RIBBON

950005P001

TRANSISTOR

NSN, MFG P/N

5961012386750

NSN

5961-01-238-6750

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950005P001

TRANSISTOR

NSN, MFG P/N

5961012386750

NSN

5961-01-238-6750

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM DRAIN TO SOURCE VOLTAGE

SD211DE

TRANSISTOR

NSN, MFG P/N

5961012386750

NSN

5961-01-238-6750

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SD211DE

TRANSISTOR

NSN, MFG P/N

5961012386750

NSN

5961-01-238-6750

MFG

TOPAZ SEMICONDUCTOR INC SUB OF HYTEK MICROSYSTEMS INC

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM DRAIN TO SOURCE VOLTAGE

13-1319437-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012386751

NSN

5961-01-238-6751

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13-1319437-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012386751

NSN

5961-01-238-6751

MFG

GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MESSAGE PRO AUX STOR
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC

1N5418

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012386751

NSN

5961-01-238-6751

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1N5418

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012386751

NSN

5961-01-238-6751

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MESSAGE PRO AUX STOR
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC

UTR-1645

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012386751

NSN

5961-01-238-6751

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UTR-1645

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012386751

NSN

5961-01-238-6751

MFG

MICRO USPD INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MESSAGE PRO AUX STOR
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC

13-1345245-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012386752

NSN

5961-01-238-6752

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13-1345245-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012386752

NSN

5961-01-238-6752

MFG

GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MESSAGE PRO AUX STOR
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

1N6391

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012386752

NSN

5961-01-238-6752

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1N6391

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012386752

NSN

5961-01-238-6752

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MESSAGE PRO AUX STOR
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

USD-4038

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012386752

NSN

5961-01-238-6752

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USD-4038

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012386752

NSN

5961-01-238-6752

MFG

MICRO USPD INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MESSAGE PRO AUX STOR
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

BE-2-8-170

CONTROLLER,THYRISTO

NSN, MFG P/N

5961012387362

NSN

5961-01-238-7362

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BE-2-8-170

CONTROLLER,THYRISTO

NSN, MFG P/N

5961012387362

NSN

5961-01-238-7362

MFG

DE LA RUE GIORI S.A.

LS72(SENDER)KALLF

PHOTO CELL

NSN, MFG P/N

5961012387368

NSN

5961-01-238-7368

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LS72(SENDER)KALLF

PHOTO CELL

NSN, MFG P/N

5961012387368

NSN

5961-01-238-7368

MFG

DE LA RUE GIORI S.A.

LS72(RECEIVER)KALLF

PHOTO CELL

NSN, MFG P/N

5961012387369

NSN

5961-01-238-7369

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LS72(RECEIVER)KALLF

PHOTO CELL

NSN, MFG P/N

5961012387369

NSN

5961-01-238-7369

MFG

DE LA RUE GIORI S.A.

805891

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012387600

NSN

5961-01-238-7600

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805891

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012387600

NSN

5961-01-238-7600

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MANUFACTURERS CODE: 64547
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 805891-1
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.570 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 TURRET

805891-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012387600

NSN

5961-01-238-7600

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805891-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012387600

NSN

5961-01-238-7600

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - TORRANCE

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MANUFACTURERS CODE: 64547
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 805891-1
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.570 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 TURRET